BSM50GB120DN2HOSA1
vs
BSM50GB100D
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
SIEMENS A G
|
| Part Package Code |
MODULE
|
|
| Package Description |
MODULE-7
|
FLANGE MOUNT, R-PUFM-X7
|
| Pin Count |
7
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
Infineon
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
78 A
|
50 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1000 V
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
| JESD-30 Code |
R-XUFM-X7
|
R-PUFM-X7
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
7
|
7
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
450 ns
|
|
| Turn-on Time-Nom (ton) |
100 ns
|
30 ns
|
| Base Number Matches |
1
|
2
|
| HTS Code |
|
8541.29.00.95
|
| Gate-Emitter Thr Voltage-Max |
|
6.2 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| Power Dissipation Ambient-Max |
|
500 W
|
| Power Dissipation-Max (Abs) |
|
400 W
|
| Transistor Application |
|
POWER CONTROL
|
| Turn-on Time-Max (ton) |
|
40 ns
|
| VCEsat-Max |
|
3.3 V
|
|
|
|
Compare BSM50GB120DN2HOSA1 with alternatives
Compare BSM50GB100D with alternatives