BSO211P vs NDS9953AD84Z feature comparison

BSO211P Rochester Electronics LLC

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NDS9953AD84Z Fairchild Semiconductor Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT SOT
Package Description SO-8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8 8
Reach Compliance Code unknown unknown
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 28 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 30 V
Drain Current-Max (ID) 4.7 A 2.9 A
Drain-source On Resistance-Max 0.067 Ω 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 18.8 A 10 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish NOT SPECIFIED
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
ECCN Code EAR99
Operating Temperature-Max 150 °C

Compare BSO211P with alternatives

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