BSP129E7941 vs BSP300E6327 feature comparison

BSP129E7941 Infineon Technologies AG

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BSP300E6327 Infineon Technologies AG

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 240 V 800 V
Drain Current-Max (ID) 0.2 A 0.19 A
Drain-source On Resistance-Max 20 Ω 20 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode DEPLETION MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 0.6 A 0.76 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code No
Pin Count 4
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 36 mJ
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 255
Power Dissipation-Max (Abs) 1.8 W

Compare BSP129E7941 with alternatives

Compare BSP300E6327 with alternatives