BSP170P vs NDT2955 feature comparison

BSP170P Infineon Technologies AG

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NDT2955 Rochester Electronics LLC

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ROCHESTER ELECTRONICS LLC
Package Description PLASTIC PACKAGE-4
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 70 mJ 174 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 1.9 A 2.5 A
Drain-source On Resistance-Max 0.3 Ω 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 7.6 A 15 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Element Material SILICON SILICON
Base Number Matches 5 1
Transistor Application SWITCHING

Compare BSP170P with alternatives

Compare NDT2955 with alternatives