BSP30T/R
vs
BSP19-T
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
1 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
20 pF
|
2.5 pF
|
| Collector-Emitter Voltage-Max |
60 V
|
350 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
40
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
2 W
|
1.2 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
70 MHz
|
| Turn-off Time-Max (toff) |
650 ns
|
|
| Turn-on Time-Max (ton) |
500 ns
|
|
| VCEsat-Max |
0.5 V
|
0.5 V
|
| Base Number Matches |
3
|
2
|
| Date Of Intro |
|
2017-02-01
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
IEC-134
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSP30T/R with alternatives
Compare BSP19-T with alternatives