BSP315
vs
BSP315E6327
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
SIEMENS A G
|
| Reach Compliance Code |
unknown
|
unknown
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
50 V
|
50 V
|
| Drain Current-Max (ID) |
1 A
|
1.1 A
|
| Drain-source On Resistance-Max |
0.8 Ω
|
0.8 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
4 A
|
4.4 A
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Part Package Code |
|
SOT-223
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G4
|
| Pin Count |
|
4
|
| ECCN Code |
|
EAR99
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
|
|
|
Compare BSP315 with alternatives
Compare BSP315E6327 with alternatives