BSP319E6327
vs
BSP318E6327
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
SIEMENS A G
|
SIEMENS A G
|
Part Package Code |
SOT-223
|
SOT-223
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
Pin Count |
4
|
4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
|
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
90 mJ
|
8 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
50 V
|
60 V
|
Drain Current-Max (ID) |
3.8 A
|
2.6 A
|
Drain-source On Resistance-Max |
0.07 Ω
|
0.15 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
15 A
|
10.4 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
|
|
|
Compare BSP319E6327 with alternatives
Compare BSP318E6327 with alternatives