BSP52,115
vs
BSP52E6327XT
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Part Package Code |
SC-73
|
SOT-223
|
| Package Description |
PLASTIC, SMD, SC-73, 4 PIN
|
SMALL OUTLINE, R-PDSO-G4
|
| Pin Count |
4
|
4
|
| Manufacturer Package Code |
SOT223
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
0.5 A
|
1 A
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
2000
|
2000
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Power Dissipation-Max (Abs) |
1.5 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| VCEsat-Max |
1.3 V
|
|
| Base Number Matches |
1
|
1
|
| Turn-off Time-Max (toff) |
|
1500 ns
|
| Turn-on Time-Max (ton) |
|
400 ns
|
|
|
|
Compare BSP52,115 with alternatives
Compare BSP52E6327XT with alternatives