BSP52,115
vs
BSP50T/R
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
PHILIPS SEMICONDUCTORS
|
| Part Package Code |
SC-73
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
,
|
| Pin Count |
4
|
|
| Manufacturer Package Code |
SOT223
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Date Of Intro |
1997-09-01
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.5 A
|
2 A
|
| Collector-Emitter Voltage-Max |
80 V
|
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
2000
|
2000
|
| JESD-30 Code |
R-PDSO-G4
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
4
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| VCEsat-Max |
1.3 V
|
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Power Dissipation-Max (Abs) |
|
1.5 W
|
|
|
|
Compare BSP52,115 with alternatives