BSP52E6327
vs
BSP52T/R
feature comparison
|
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Datasheet
|
BSP52T/R
Philips Semiconductors
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Datasheet
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
1 A
|
2 A
|
| Collector-Emitter Voltage-Max |
80 V
|
|
| Configuration |
DARLINGTON
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
2000
|
2000
|
| JESD-30 Code |
R-PDSO-G4
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
4
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| Turn-off Time-Max (toff) |
1500 ns
|
|
| Turn-on Time-Max (ton) |
400 ns
|
|
| Base Number Matches |
2
|
3
|
| Rohs Code |
|
Yes
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
1.5 W
|
|
|
|