BSP52T3G
vs
BSP52E6327XT
feature comparison
Source Content uid |
BSP52T3G
|
|
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
SIEMENS A G
|
Part Package Code |
SOT-223 (TO-261) 4 LEAD
|
SOT-223
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
Pin Count |
4
|
4
|
Manufacturer Package Code |
0.0318
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
64 Weeks
|
|
Samacsys Manufacturer |
onsemi
|
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
1 A
|
1 A
|
Collector-Emitter Voltage-Max |
80 V
|
80 V
|
Configuration |
DARLINGTON
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DC Current Gain-Min (hFE) |
2000
|
2000
|
JEDEC-95 Code |
TO-261AA
|
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
2
|
Number of Terminals |
4
|
4
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation-Max (Abs) |
1.25 W
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Transition Frequency-Nom (fT) |
|
200 MHz
|
Turn-off Time-Max (toff) |
|
1500 ns
|
Turn-on Time-Max (ton) |
|
400 ns
|
|
|
|
Compare BSP52T3G with alternatives
Compare BSP52E6327XT with alternatives