BSP89L6327HTSA1 vs BSP89E6327T feature comparison

BSP89L6327HTSA1 Infineon Technologies AG

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BSP89E6327T Infineon Technologies AG

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 240 V 240 V
Drain Current-Max (ID) 0.35 A 0.35 A
Drain-source On Resistance-Max 6 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 1.4 A 1.4 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pin Count 4
Additional Feature LOGIC LEVEL COMPATIBLE
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

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