BSS123 vs BSS123T/R feature comparison

BSS123 North American Philips Discrete Products Div

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BSS123T/R Philips Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV PHILIPS SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.15 A 0.15 A
Drain-source On Resistance-Max 6 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF 10 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.25 W 0.25 W
Power Dissipation-Max (Abs) 0.25 W 0.25 W
Reference Standard IEC-134 IEC-134
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 25 3
Package Description ,
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260