BSS192,135 vs BSS119E-6327 feature comparison

BSS192,135 NXP Semiconductors

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BSS119E-6327 Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS INFINEON TECHNOLOGIES AG
Part Package Code SOT-89 SOT-23
Package Description PLASTIC, SC-62, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code SOT89
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature CMOS COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 240 V 100 V
Drain Current-Max (ID) 0.2 A 0.17 A
Drain-source On Resistance-Max 12 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 1 W 0.36 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form FLAT GULL WING
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Drain Current-Max (Abs) (ID) 0.17 A

Compare BSS192,135 with alternatives

Compare BSS119E-6327 with alternatives