BSS80B vs BSS80CE6327 feature comparison

BSS80B National Semiconductor Corporation

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BSS80CE6327 Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.8 A 0.8 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 100
JESD-609 Code e0
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.225 W 0.33 W
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT) 200 MHz 250 MHz
Base Number Matches 7 2
Collector-Emitter Voltage-Max 40 V
JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 50 ns

Compare BSS80B with alternatives

Compare BSS80CE6327 with alternatives