BSZ088N03LSG
vs
PSMN010-30YLDX
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-N5
|
SMALL OUTLINE, R-PSSO-G4
|
| Pin Count |
8
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
|
| Avalanche Energy Rating (Eas) |
25 mJ
|
23.5 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
40 A
|
40 A
|
| Drain-source On Resistance-Max |
0.013 Ω
|
0.014 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-N5
|
R-PSSO-G4
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
35 W
|
31 W
|
| Pulsed Drain Current-Max (IDM) |
160 A
|
162 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
NO LEAD
|
GULL WING
|
| Terminal Position |
DUAL
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| JEDEC-95 Code |
|
MO-235
|
| Reference Standard |
|
IEC-60134
|
|
|
|
Compare BSZ088N03LSG with alternatives
Compare PSMN010-30YLDX with alternatives