BT134W-600E-T vs BT134W-600D feature comparison

BT134W-600E-T NXP Semiconductors

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BT134W-600D NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Pin Count 4 4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Additional Feature SENSITIVE GATE SENSITIVE GATE
Case Connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 1 A 1 A
Repetitive Peak Off-state Voltage 600 V 600 V
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Trigger Device Type TRIAC 4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches 1 3
Critical Rate of Rise of Off-State Voltage-Min 5 V/us
DC Gate Trigger Current-Max 5 mA
DC Gate Trigger Voltage-Max 1.5 V
Holding Current-Max 10 mA
Leakage Current-Max 0.5 mA
Operating Temperature-Max 125 °C
Peak Reflow Temperature (Cel) 260
Repetitive Peak Off-state Leakage Current-Max 500 µA
Time@Peak Reflow Temperature-Max (s) 30

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