BT136S-600E/T3 vs T435-800B feature comparison

BT136S-600E/T3 NXP Semiconductors

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T435-800B STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS STMICROELECTRONICS
Part Package Code TO-252 TO-252
Package Description SMALL OUTLINE, R-PSSO-G2 DPAK-3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Additional Feature SENSITIVE GATE
Case Connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
DC Gate Trigger Current-Max 10 mA 35 mA
DC Gate Trigger Voltage-Max 1.5 V 1.5 V
Holding Current-Max 15 mA 35 mA
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 110 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 4 A 4 A
Repetitive Peak Off-state Leakage Current-Max 500 µA
Repetitive Peak Off-state Voltage 600 V 800 V
Surface Mount YES YES
Terminal Finish TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Trigger Device Type 4 QUADRANT LOGIC LEVEL TRIAC SNUBBERLESS TRIAC
Base Number Matches 1 2
Rohs Code Yes
Critical Rate of Rise of Off-State Voltage-Min 250 V/us
Leakage Current-Max 0.01 mA
Moisture Sensitivity Level 1
Operating Temperature-Min -40 °C
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare BT136S-600E/T3 with alternatives

Compare T435-800B with alternatives