BUK456-100A vs NTP52N10G feature comparison

BUK456-100A North American Philips Discrete Products Div

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NTP52N10G onsemi

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV ON SEMICONDUCTOR
Package Description , FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 34 A 60 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e3
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 214 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) Tin (Sn)
Base Number Matches 3 1
Pbfree Code Yes
Part Package Code TO-220 3 LEAD STANDARD
Pin Count 3
Manufacturer Package Code 221A
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 800 mJ
Case Connection DRAIN
DS Breakdown Voltage-Min 100 V
Drain-source On Resistance-Max 0.03 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 156 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

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