BUK7E2R7-30B
vs
IRF2903ZPBF
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
End Of Life
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
TO-262AA
|
|
| Package Description |
PLASTIC, I2PAK-3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
|
| Avalanche Energy Rating (Eas) |
2300 mJ
|
820 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
75 A
|
75 A
|
| Drain-source On Resistance-Max |
0.0027 Ω
|
0.0024 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-262AA
|
TO-220AB
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
300 W
|
290 W
|
| Pulsed Drain Current-Max (IDM) |
967 A
|
1020 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
Infineon
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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