BUK9217-75B vs BUK9217-75B,118 feature comparison

BUK9217-75B Philips Semiconductors

Buy Now Datasheet

BUK9217-75B,118 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 64 A 64 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 185 °C 185 °C
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 167 W 167 W
Surface Mount YES YES
Base Number Matches 3 2
Part Package Code DPAK
Package Description PLASTIC, SC-63, DPAK-3
Pin Count 3
Manufacturer Package Code SOT428
HTS Code 8541.29.00.75
Additional Feature LOGIC LEVEL COMPITABLE
Avalanche Energy Rating (Eas) 147 mJ
Case Connection DRAIN
DS Breakdown Voltage-Min 75 V
Drain-source On Resistance-Max 0.017 Ω
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 256 A
Qualification Status Not Qualified
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON