BUK9M9R1-40EX vs STDV5804NT4G feature comparison

BUK9M9R1-40EX Nexperia

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STDV5804NT4G onsemi

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Part Life Cycle Code Active End Of Life
Ihs Manufacturer NEXPERIA ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G2
Pin Count 8
Manufacturer Package Code SOT1210 369AA
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Nexperia onsemi
Avalanche Energy Rating (Eas) 42.8 mJ 195 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 64 A 69 A
Drain-source On Resistance-Max 0.0091 Ω 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 258 A 125 A
Reference Standard AEC-Q101; IEC-60134 AEC-Q101
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Feedback Cap-Max (Crss) 280 pF
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 71 W

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