BUK9Y40-55B
vs
BUK9Y40-55B,115
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
Package Description |
SMALL OUTLINE, R-PSSO-G4
|
PLASTIC, LFPAK-4
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2017-02-01
|
|
Samacsys Manufacturer |
Nexperia
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
36 mJ
|
36 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
26 A
|
26 A
|
Drain-source On Resistance-Max |
0.04 Ω
|
0.04 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G4
|
R-PSSO-G4
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
106 A
|
106 A
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
SOIC
|
Pin Count |
|
4
|
Manufacturer Package Code |
|
SOT669
|
HTS Code |
|
8541.29.00.75
|
JEDEC-95 Code |
|
MO-235
|
Operating Temperature-Max |
|
175 °C
|
Power Dissipation-Max (Abs) |
|
59 W
|
Qualification Status |
|
Not Qualified
|
|
|
|