BUZ102S-4
vs
BUZ102S-4
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
SOT
|
SOT
|
| Package Description |
SMALL OUTLINE, R-PDSO-G28
|
SMALL OUTLINE, R-PDSO-G28
|
| Pin Count |
28
|
28
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
245 mJ
|
245 mJ
|
| Configuration |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
55 V
|
55 V
|
| Drain Current-Max (ID) |
6.4 A
|
6.4 A
|
| Drain-source On Resistance-Max |
0.028 Ω
|
0.028 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G28
|
R-PDSO-G28
|
| Number of Elements |
4
|
4
|
| Number of Terminals |
28
|
28
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
25.6 A
|
26.6 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
AVALANCHE RATED
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
9.6 W
|
| Transistor Application |
|
SWITCHING
|
|
|
|