BUZ11 vs BUZ11 feature comparison

BUZ11 Infineon Technologies AG

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BUZ11 Fairchild Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 30 A 30 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W 75 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Base Number Matches 28 3
HTS Code 8541.29.00.95
Case Connection DRAIN
DS Breakdown Voltage-Min 50 V
Drain-source On Resistance-Max 0.04 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare BUZ11 with alternatives

Compare BUZ11 with alternatives