BUZ11 vs BUZ11 feature comparison

BUZ11 Infineon Technologies AG

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BUZ11 Motorola Semiconductor Products

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG MOTOROLA INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 30 A 30 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W 75 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 28 33
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
DS Breakdown Voltage-Min 50 V
Drain-source On Resistance-Max 0.04 Ω
Feedback Cap-Max (Crss) 400 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Max (ton) 155 ns

Compare BUZ11 with alternatives

Compare BUZ11 with alternatives