BUZ11 vs BUZ11 feature comparison

BUZ11 TT Electronics Resistors

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BUZ11 Intersil Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TT ELECTRONICS PLC INTERSIL CORP
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 50 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.04 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Rohs Code No
HTS Code 8541.29.00.95
Case Connection DRAIN
Feedback Cap-Max (Crss) 400 pF
JEDEC-95 Code TO-220AB
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 120 A
Terminal Finish TIN LEAD
Transistor Application SWITCHING
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Max (ton) 155 ns

Compare BUZ11 with alternatives

Compare BUZ11 with alternatives