BUZ11A vs MTD20N06VT4 feature comparison

BUZ11A Siemens

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MTD20N06VT4 onsemi

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SIEMENS A G ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 14 mJ 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 60 V
Drain Current-Max (ID) 26 A 20 A
Drain-source On Resistance-Max 0.055 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 250 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W 60 W
Pulsed Drain Current-Max (IDM) 104 A 70 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 270 ns
Turn-on Time-Max (ton) 110 ns
Base Number Matches 8 2
Pin Count 3
Manufacturer Package Code CASE 369C-01
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 235

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