BUZ30A
vs
2SK1620(S)TR
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
HITACHI LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
200 V
|
150 V
|
| Drain Current-Max (ID) |
21 A
|
10 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
2
|
| Package Description |
|
SMALL OUTLINE, R-PSSO-G2
|
| Drain-source On Resistance-Max |
|
0.15 Ω
|
| JESD-30 Code |
|
R-PSSO-G2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
|
|
|
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