BUZ30A
vs
BUZ31
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
SEMELAB LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE
|
Single
|
| DS Breakdown Voltage-Min |
200 V
|
|
| Drain Current-Max (ID) |
21 A
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
7
|
| Package Description |
|
,
|
| Drain Current-Max (Abs) (ID) |
|
12.5 A
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
75 W
|
| Surface Mount |
|
NO
|
|
|
|
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