BUZ323
vs
MTW16N40E
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
790 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
Single
|
| DS Breakdown Voltage-Min |
400 V
|
|
| Drain Current-Max (ID) |
15 A
|
|
| Drain-source On Resistance-Max |
0.3 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-218AA
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
60 A
|
|
| Qualification Status |
COMMERCIAL
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
NOT SPECIFIED
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
5
|
| Rohs Code |
|
No
|
| Package Description |
|
,
|
| Drain Current-Max (Abs) (ID) |
|
16 A
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
180 W
|
|
|
|
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