BUZ325 vs MTW16N40E feature comparison

BUZ325 Infineon Technologies AG

Buy Now Datasheet

MTW16N40E Rochester Electronics LLC

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ROCHESTER ELECTRONICS LLC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED HIGH VOLTAGE
Avalanche Energy Rating (Eas) 670 mJ 870 mJ
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 12.5 A 16 A
Drain-source On Resistance-Max 0.35 Ω 0.24 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-218 TO-247AE
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 50 A 56 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Part Package Code TO-247AE
Package Description CASE 340K-01, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 340K-01
Case Connection DRAIN
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare BUZ325 with alternatives

Compare MTW16N40E with alternatives