BUZ32H3045AATMA1
vs
BSZ42DN25NS3G
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
D2PAK
|
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
SMALL OUTLINE, S-PDSO-N5
|
| Pin Count |
4
|
8
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
120 mJ
|
40 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
250 V
|
| Drain Current-Max (ID) |
9.5 A
|
5 A
|
| Drain-source On Resistance-Max |
0.4 Ω
|
0.425 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-263AA
|
|
| JESD-30 Code |
R-PSSO-G2
|
S-PDSO-N8
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
38 A
|
20 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
SINGLE
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
33.8 W
|
| Terminal Finish |
|
Tin (Sn)
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BUZ32H3045AATMA1 with alternatives
Compare BSZ42DN25NS3G with alternatives