BUZ32H3045AATMA1 vs BUZ73AHXKSA1 feature comparison

BUZ32H3045AATMA1 Infineon Technologies AG

Buy Now Datasheet

BUZ73AHXKSA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code D2PAK TO-220AB
Package Description SMALL OUTLINE, R-PSSO-G2 GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 4 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 120 mJ 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 9.5 A 5.5 A
Drain-source On Resistance-Max 0.4 Ω 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 38 A 22 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 4 Weeks

Compare BUZ32H3045AATMA1 with alternatives

Compare BUZ73AHXKSA1 with alternatives