BUZ41A vs RFP6N50 feature comparison

BUZ41A Intersil Corporation

Buy Now Datasheet

RFP6N50 Harris Semiconductor

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERSIL CORP HARRIS SEMICONDUCTOR
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 4.5 A 6 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W 75 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 1 1
HTS Code 8541.29.00.95
Case Connection DRAIN
DS Breakdown Voltage-Min 500 V
Drain-source On Resistance-Max 1.25 Ω
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Max (ton) 125 ns

Compare BUZ41A with alternatives

Compare RFP6N50 with alternatives