BUZ71 vs STP20NE06 feature comparison

BUZ71 Microsemi Corporation

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STP20NE06 STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP STMICROELECTRONICS
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 60 V
Drain Current-Max (ID) 56 A 20 A
Drain-source On Resistance-Max 0.1 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220 TO-220AB
JESD-30 Code R-PSFM-T2 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 20 1
Rohs Code No
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 100 mJ
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 80 A
Transistor Application SWITCHING

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