BZW04-53B vs BZW04-58HB0G feature comparison

BZW04-53B STMicroelectronics

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BZW04-58HB0G Taiwan Semiconductor

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS TAIWAN SEMICONDUCTOR CO LTD
Package Description PLASTIC, F126, 2 PIN O-PALF-W2
Pin Count 2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 65.1 V 71.4 V
Breakdown Voltage-Min 58.9 V 64.6 V
Breakdown Voltage-Nom 62 V 68 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 111 V 92 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 145 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.7 W 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 53 V 58.1 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN PURE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
JEDEC-95 Code DO-204AL
Operating Temperature-Min -55 °C

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Compare BZW04-58HB0G with alternatives