BZX79C12
vs
BZT55C12L1G
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
End Of Life
|
Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
TAIWAN SEMICONDUCTOR CO LTD
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Configuration |
SINGLE
|
SINGLE
|
Diode Type |
ZENER DIODE
|
ZENER DIODE
|
Dynamic Impedance-Max |
25 Ω
|
20 Ω
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Operating Temperature-Max |
200 °C
|
175 °C
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
0.5 W
|
0.5 W
|
Reference Voltage-Nom |
12 V
|
12 V
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN OVER NICKEL
|
Voltage Tol-Max |
5%
|
5%
|
Working Test Current |
5 mA
|
5 mA
|
Base Number Matches |
23
|
1
|
Case Connection |
|
ISOLATED
|
Diode Element Material |
|
SILICON
|
JEDEC-95 Code |
|
DO-213AA
|
JESD-30 Code |
|
O-LELF-R2
|
Knee Impedance-Max |
|
90 Ω
|
Moisture Sensitivity Level |
|
1
|
Number of Terminals |
|
2
|
Operating Temperature-Min |
|
-65 °C
|
Package Body Material |
|
GLASS
|
Package Shape |
|
ROUND
|
Package Style |
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
|
260
|
Reverse Current-Max |
|
0.1 µA
|
Reverse Test Voltage |
|
9.1 V
|
Technology |
|
ZENER
|
Terminal Form |
|
WRAP AROUND
|
Terminal Position |
|
END
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BZX79C12 with alternatives
Compare BZT55C12L1G with alternatives