C3M0016120K
vs
C3M0016120K
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
WOLFSPEED INC
|
CREE INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Wolfspeed
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
| Drain Current-Max (ID) |
115 A
|
115 A
|
| Drain-source On Resistance-Max |
0.0223 Ω
|
0.0223 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
13 pF
|
13 pF
|
| JESD-30 Code |
R-PSFM-T4
|
R-PSFM-T4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
556 W
|
556 W
|
| Pulsed Drain Current-Max (IDM) |
250 A
|
250 A
|
| Reference Standard |
IEC-60747-8-4
|
IEC-60747-8-4
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON CARBIDE
|
SILICON CARBIDE
|
| Base Number Matches |
1
|
1
|
| Date Of Intro |
|
2019-04-23
|
|
|
|
Compare C3M0016120K with alternatives
Compare C3M0016120K with alternatives