CMPD1001TIN/LEAD
vs
BAS29,215
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
NXP SEMICONDUCTORS
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Date Of Intro
2018-01-31
Application
GENERAL PURPOSE
Breakdown Voltage-Min
90 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1.25 V
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e0
e3
Non-rep Pk Forward Current-Max
1 A
3 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Output Current-Max
0.25 A
0.25 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.35 W
0.25 W
Rep Pk Reverse Voltage-Max
90 V
110 V
Reverse Current-Max
0.1 µA
0.1 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Reverse Test Voltage
90 V
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Part Package Code
TO-236
Package Description
PLASTIC PACKAGE-3
Pin Count
3
Manufacturer Package Code
SOT23
JEDEC-95 Code
TO-236AB
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Technology
AVALANCHE
Time@Peak Reflow Temperature-Max (s)
30
Compare CMPD1001TIN/LEAD with alternatives
Compare BAS29,215 with alternatives