CSD18543Q3AT
vs
NVTFS5820NLWFTAG
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
ONSEMI
|
Package Description |
SMALL OUTLINE, R-PDSO-F5
|
WDFN-8
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Date Of Intro |
2016-12-09
|
|
Samacsys Manufacturer |
Texas Instruments
|
onsemi
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
55 mJ
|
48 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
60 A
|
|
Drain-source On Resistance-Max |
0.0156 Ω
|
0.0115 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
6.2 pF
|
|
JESD-30 Code |
R-PDSO-F5
|
S-PDSO-F5
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
156 A
|
247 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Tin (Sn)
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
WDFN8 3.3x3.3, 0.65P
|
Pin Count |
|
8
|
Manufacturer Package Code |
|
511AB
|
Reference Standard |
|
AEC-Q101
|
|
|
|
Compare CSD18543Q3AT with alternatives
Compare NVTFS5820NLWFTAG with alternatives