CSD19534Q5AT
vs
EPC2016
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
EFFICIENT POWER CONVERSION CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-F5
|
UNCASED CHIP, R-XXUC-X6
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Samacsys Manufacturer |
Texas Instruments
|
|
| Additional Feature |
AVALANCHE RATED
|
ULTRA LOW RESISTANCE
|
| Avalanche Energy Rating (Eas) |
55 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
44 A
|
11 A
|
| Drain-source On Resistance-Max |
0.0176 Ω
|
0.016 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
7.4 pF
|
|
| JESD-30 Code |
R-PDSO-N8
|
R-XXUC-X6
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
UNCASED CHIP
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
137 A
|
50 A
|
| Surface Mount |
YES
|
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
NO LEAD
|
UNSPECIFIED
|
| Terminal Position |
DUAL
|
UNSPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
GALLIUM NITRIDE
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare CSD19534Q5AT with alternatives
Compare EPC2016 with alternatives