D4448 vs MMBD4448W feature comparison

MMBD4448W-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

MMBD4448W Bytesonic Corporation

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Package Description R-PDSO-G3
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Output Current-Max 0.5 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.2 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 6 1
ECCN Code EAR99
HTS Code 8541.10.00.70
Application GENERAL PURPOSE
Breakdown Voltage-Min 75 V
Forward Voltage-Max (VF) 1.25 V
Number of Phases 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Reverse Current-Max 2.5 µA
Reverse Test Voltage 75 V

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Compare MMBD4448W with alternatives

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