DF06M
vs
DB1M
feature comparison
| Rohs Code |
|
No
|
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
HARRIS SEMICONDUCTOR
|
| Package Description |
|
R-PDIP-T4
|
| Reach Compliance Code |
|
unknown
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Breakdown Voltage-Min |
|
600 V
|
| Configuration |
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
|
1.1 V
|
| JESD-30 Code |
|
R-PDIP-T4
|
| JESD-609 Code |
|
e0
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Number of Elements |
|
4
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
4
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Output Current-Max |
|
1 A
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Qualification Status |
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
|
600 V
|
| Reverse Current-Max |
|
0.00001 µA
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
DUAL
|
| Base Number Matches |
|
1
|
|
|
|
Compare DB1M with alternatives