DM8W16A-13
vs
SM8S16ATHE3/I
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
DIODES INC
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
R-PSSO-C1
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Factory Lead Time |
32 Weeks
|
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Breakdown Voltage-Max |
19.7 V
|
19.7 V
|
| Breakdown Voltage-Min |
17.8 V
|
17.8 V
|
| Breakdown Voltage-Nom |
18.75 V
|
18.8 V
|
| Case Connection |
ANODE
|
ANODE
|
| Clamping Voltage-Max |
26 V
|
26 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-218
|
DO-218AC
|
| JESD-30 Code |
R-PSSO-C1
|
R-PSSO-C1
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
6600 W
|
6600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
245
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
8 W
|
8 W
|
| Reference Standard |
ISO 7637-2; ISO 16750-2
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
16 V
|
16 V
|
| Reverse Current-Max |
10 µA
|
150 µA
|
| Reverse Test Voltage |
16 V
|
16 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
Vishay
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|