DN2540N3-GP002
vs
DN2540N3P018
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
SUPERTEX INC
|
Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-PBCY-T3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
0.12 A
|
0.17 A
|
Drain-source On Resistance-Max |
25 Ω
|
25 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
5 pF
|
5 pF
|
JEDEC-95 Code |
TO-92
|
TO-92
|
JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
No
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
LOW THRESHOLD
|
DS Breakdown Voltage-Min |
|
400 V
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
1 W
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare DN2540N3-GP002 with alternatives
Compare DN2540N3P018 with alternatives