DRA2144E
vs
MMUN2113LT1G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
PANASONIC CORP
|
ONSEMI
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT IN BIAS RESISTOR RATIO IS 1
|
BUILT-IN BIAS RESISTOR RATIO 1
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
80
|
80
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.2 W
|
0.2 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
SOT-23 (TO-236) 3 LEAD
|
| Manufacturer Package Code |
|
318-08
|
| Factory Lead Time |
|
49 Weeks, 4 Days
|
| Samacsys Manufacturer |
|
onsemi
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
| VCEsat-Max |
|
0.25 V
|
|
|
|
Compare DRA2144E with alternatives
Compare MMUN2113LT1G with alternatives