DSB5817 vs 1N5817E3 feature comparison

DSB5817 Compensated Devices Inc

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1N5817E3 Microsemi Corporation

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer COMPENSATED DEVICES INC MICROSEMI CORP
Reach Compliance Code unknown compliant
Additional Feature METALLURGICALLY BONDED HIGH RELIABILITY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 20 V 20 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 2
Package Description PLASTIC PACKAGE-2
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Microsemi Corporation
Application GENERAL PURPOSE
Number of Phases 1

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