DSB5817
vs
1N5817E3
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
COMPENSATED DEVICES INC
|
MICROSEMI CORP
|
Reach Compliance Code |
unknown
|
compliant
|
Additional Feature |
METALLURGICALLY BONDED
|
HIGH RELIABILITY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JEDEC-95 Code |
DO-41
|
DO-41
|
JESD-30 Code |
O-XALF-W2
|
O-PALF-W2
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
125 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
|
Rep Pk Reverse Voltage-Max |
20 V
|
20 V
|
Surface Mount |
NO
|
NO
|
Technology |
SCHOTTKY
|
SCHOTTKY
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
3
|
2
|
Package Description |
|
PLASTIC PACKAGE-2
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.80
|
Samacsys Manufacturer |
|
Microsemi Corporation
|
Application |
|
GENERAL PURPOSE
|
Number of Phases |
|
1
|
|
|
|
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