DTA123JET1 vs BC849-B feature comparison

DTA123JET1 Rochester Electronics LLC

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BC849-B Samsung Semiconductor

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SAMSUNG SEMICONDUCTOR INC
Part Package Code SC-75 SOT-23
Package Description CASE 463-01, SC-75, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code CASE 463-01
Reach Compliance Code unknown unknown
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.36 LOW NOISE
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 30 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 80 200
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type PNP NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 4
ECCN Code EAR99
Transition Frequency-Nom (fT) 300 MHz

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