DTA123JKAT246 vs 2N6717-18 feature comparison

DTA123JKAT246 ROHM Semiconductor

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2N6717-18 National Semiconductor Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROHM CO LTD NATIONAL SEMICONDUCTOR CORP
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V 80 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 80 50
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 50 MHz
VCEsat-Max 0.3 V 0.5 V
Base Number Matches 1 1
HTS Code 8541.29.00.75
Collector-Base Capacitance-Max 30 pF
Power Dissipation Ambient-Max 2 W

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